Title :
Gate oxide integrity issue caused by wall-related process drift in plasma etching
Author :
Xu, Songlin ; Lill, Thorsten
Author_Institution :
Appl. Mater. Inc., Sunnyvale, CA, USA
Abstract :
Different gate oxide loss in polysilicon gate etching has been found when the chamber wall condition changes, which might affect the consistency of device performance in IC production. In this work, the mechanism of wall-related process drift has been studied through etch performance evaluation and plasma diagnostics. The root cause of this issue has been identified as significant plasma property change due to the variation of surface recombination rate, of reactive free radicals with wall condition.
Keywords :
elemental semiconductors; free radical reactions; plasma chemistry; plasma diagnostics; plasma-wall interactions; semiconductor-insulator boundaries; silicon; silicon compounds; sputter etching; IC production; Si; Si-SiO2; chamber wall condition; etch performance evaluation; gate oxide integrity; gate oxide loss; plasma diagnostics; plasma etching; plasma property change; polysilicon gate etching; reactive free radicals; surface recombination rate; wall-related process drift; Cleaning; Etching; Performance loss; Plasma applications; Plasma diagnostics; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Production;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042608
