DocumentCode :
2380481
Title :
ZZ-HVS: Zig-zag horizontal and vertical sleep transistor sharing to reduce leakage power in on-chip SRAM peripheral circuits
Author :
Homayoun, Houman ; Makhzan, Mohammad ; Veidenbaum, Alex
Author_Institution :
Dept. of Comput. Sci., UC, Irvine, CA
fYear :
2008
fDate :
12-15 Oct. 2008
Firstpage :
699
Lastpage :
706
Abstract :
Based on Recent studies peripheral circuit (including decoders, wordline drivers, input and output drivers) constitutes a large portion of the cache leakage. In addition as technology migrate to smaller geometries, leakage contribution to total power consumption increases faster than dynamic power, promoting leakage as the largest power consumption factor. This paper proposes zig-zag share, a circuit technique to reduce leakage in SRAM peripheral. Using architectural control of zig-zag share, an integrated technique called Sleep-Share is proposed and applied in L1 and L2 caches. The results show leakage reduction by up to 40X in deeply pipelined SRAM peripheral circuits, with only a 4% area overhead and small additional delay.
Keywords :
SRAM chips; cache storage; architectural control; cache leakage; leakage power; leakage reduction; on-chip SRAM peripheral circuits; zig-zag horizontal and vertical sleep transistor sharing; CMOS technology; Decoding; Delay; Driver circuits; Energy consumption; Integrated circuit technology; Power dissipation; Random access memory; Sleep; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design, 2008. ICCD 2008. IEEE International Conference on
Conference_Location :
Lake Tahoe, CA
ISSN :
1063-6404
Print_ISBN :
978-1-4244-2657-7
Electronic_ISBN :
1063-6404
Type :
conf
DOI :
10.1109/ICCD.2008.4751937
Filename :
4751937
Link To Document :
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