DocumentCode :
2380511
Title :
Electron shading effects during oxide etching in uniform and non-uniform plasmas
Author :
Lukaszek, Wes ; Shields, Jeffrey
Author_Institution :
Wafer Charging Monitors Inc., Woodside, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
68
Lastpage :
71
Abstract :
Potentials and current densities imposed on device structures during oxide etching due to electron shading effects are presented. Comparison of results obtained in etchers exhibiting good plasma uniformity with results from etchers exhibiting plasma non-uniformity emphasizes the importance of uniform plasma to minimize charging damage during IC manufacturing.
Keywords :
integrated circuit manufacture; integrated circuit reliability; plasma materials processing; sputter etching; surface charging; IC manufacturing; charging damage minimization; electron shading effects; nonuniform plasmas; oxide etching; plasma uniformity; uniform plasmas; Current density; Current measurement; Electrons; Etching; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Resists;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
Type :
conf
DOI :
10.1109/PPID.2002.1042611
Filename :
1042611
Link To Document :
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