DocumentCode :
2380549
Title :
Utility of CHARM®-2 in diagnosing sources of plasma charging damage in high density etchers and in assisting hardware development
Author :
Siu, Stanley ; Patrick, Roger ; Vahedi, Vahid
Author_Institution :
Lam Res. Corp., Fremont, CA, USA
fYear :
2002
fDate :
2002
Firstpage :
80
Lastpage :
83
Abstract :
In the early years of plasma damage history, much of the focus was on plasma nonuniformity issues. With little understanding of electron shading, many etch related damage issues were diagnosed by placing a CHARM-2 in the etch chamber, running a process and seeing if there was a signal. With high density plasma etchers, typically CHARM-2 would show no signal, though it was suspected that some type of charging damage was taking place. As the understanding of the role of electron shading in plasma charging damage became clear (2), the role of CHARM-2 in detecting plasma damage issues in high density etchers diminished.
Keywords :
plasma diagnostics; sputter etching; surface charging; ultraviolet detectors; CHARM-2; UV sensors; electron shading; hardware development; high density etchers; plasma charging damage sources diagnosis; Current measurement; Electrons; Etching; Plasma applications; Plasma density; Plasma diagnostics; Plasma measurements; Plasma sources; Sensor phenomena and characterization; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
Type :
conf
DOI :
10.1109/PPID.2002.1042614
Filename :
1042614
Link To Document :
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