Title :
Plasma induced damage monitoring for HDP processes
Author :
Beyer, A. ; Hausmann, A. ; Junack, M. ; Radecker, I. ; Ruf, A. ; Dirnecker, T.
Author_Institution :
Infineon Technol., Dresden, Germany
Abstract :
For a better comprehension of Plasma Induced Damage (PID) a Short Loop (SL) wafer concept was developed. These wafers can be used for the purpose of monitoring, process development, and tool characterization in different processes. The process of High Density Plasma (HDP) deposition for Inter Layer Dielectrics (ILD) has been investigated using the SL wafer concept. Monitoring data will be presented and it will be shown how irregularities in the process can generate PID. The process sequence can lead to a deposition at the edge of the chuck which is clearly identified as the reason for charging damage. It is shown that the damage risk can be minimized by PID monitoring using the SL wafer concept and by an extended process control.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; ion beam effects; plasma deposition; plasma materials processing; process monitoring; semiconductor growth; extended process control; high density plasma deposition; inter layer dielectrics; plasma induced damage monitoring; process development; short loop wafer concept; tool characterization; CMOS technology; Contacts; Integrated circuit technology; Leak detection; Monitoring; Plasma density; Plasma devices; Plasma immersion ion implantation; Stress; Testing;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042615
