• DocumentCode
    2380603
  • Title

    Photoluminescence analyses of plasma-treated Si[100]-surfaces

  • Author

    Reiche, M.

  • Author_Institution
    Max-Planck Inst. fur Mikrostrukturphysik, Halle, Germany
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    Photoluminescence spectroscopy was applied to analyse Si[100] surfaces after treatments in different plasmas (O2, N2, CO2, fluoride). The spectra of fluorides are characterized by the C- and G- lines, while treatments in a CO2 plasma result in the formation of a set of lines between 700 and 850 meV which are caused by the splitting of the C- and P- lines. Treatments in N2 plasmas result in a PL spectrum known from ion implantation.
  • Keywords
    elemental semiconductors; photoluminescence; plasma materials processing; silicon; surface composition; surface treatment; 700 to 850 meV; Si; fluorides; ion implantation; photoluminescence; plasma-treated Si[100]-surfaces; Etching; Photoluminescence; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma measurements; Silicon; Spectroscopy; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2002 7th International Symposium on
  • Print_ISBN
    0-9651577-7-6
  • Type

    conf

  • DOI
    10.1109/PPID.2002.1042617
  • Filename
    1042617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380603