Photoluminescence analyses of plasma-treated Si[100]-surfaces

Photoluminescence spectroscopy was applied to analyse Si[100] surfaces after treatments in different plasmas (O₂, N₂, CO₂, fluoride). The spectra of fluorides are characterized by the C- and G- lines, while treatments in a CO₂ plasma result in the formation of a set of lines between 700 and 850 meV which are caused by the splitting of the C- and P- lines. Treatments in N₂ plasmas result in a PL spectrum known from ion implantation.