DocumentCode :
2380612
Title :
ULSI circuit design trend, technology road map, and test structures for process-induced damage
Author :
Dao, Thuy B. ; Aum, P.K.
Author_Institution :
Semicond. Product Sector, Motorola Inc., Austin, TX, USA
fYear :
2002
fDate :
2002
Firstpage :
96
Lastpage :
101
Abstract :
According to the exponential growth trend of Moore´s law, single system-on-chip (SOC) device with multi-billion transistors will be available within several years. However, there are several major questions that are worth considering: What should we do with these billion-transistor devices? Which circuit design technique and system architectures will support these devices? How should we solve the heat dissipating and noise problems generated by a billion transistors? Which transistor device structures are under the consideration? What are the potential device yield and reliability problems especially process-induced damage (PID) in manufacturing these SOC devices? In this paper, industry trends and some key issues related to these questions are reviewed with the consideration of PID.
Keywords :
ULSI; integrated circuit design; integrated circuit manufacture; integrated circuit noise; integrated circuit reliability; integrated circuit technology; integrated circuit testing; integrated circuit yield; plasma materials processing; system-on-chip; IC manufacture; Moore law; SOC device; ULSI circuit design trend; circuit design technique; device yield; exponential growth trend; noise problems; process-induced damage; reliability problems; single system-on-chip device; technology road map; test structures; Circuit noise; Circuit synthesis; Circuit testing; Manufacturing industries; Manufacturing processes; Moore´s Law; Noise generators; Roads; System-on-a-chip; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
Type :
conf
DOI :
10.1109/PPID.2002.1042618
Filename :
1042618
Link To Document :
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