The Effect of Ge Condensation on Channel Strain during the Post Annealing Process of Recessed Source/Drain Si1-xGex

In summary, we investigated the possibility of effectively increasing the channel strain by oxidation and silicidation of recessed Si_1-xGe_x S/D structures and producing a Ge condensation layer. By combining EDS and NBD techniques, we were able to analyze the thickness and composition of the Ge condensation layer formed upon post annealing process, and the evolution of the channel strain. The NBD results clearly showed that this method can be critically used to effectively increase the channel strain.