• DocumentCode
    2380624
  • Title

    On-wafer monitoring for conductivity of sidewall in SiO2 contact holes

  • Author

    Shinmura, Takuya ; Soda, S. ; Hane, Kazuhiro ; Samukawa, Seiji

  • Author_Institution
    Inst. of Fluid Sci., Touhoku Univ., Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    102
  • Lastpage
    105
  • Abstract
    This paper reports on on-wafer monitoring of the conductivity of sidewall-deposited polymer in high-aspect contact holes for the first time. We have found that a carbon-rich polymer causes higher conductivity of sidewall surfaces.
  • Keywords
    ULSI; integrated circuit manufacture; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; silicon compounds; sputter etching; surface conductivity; C-rich polymer; SiO2; ULSI fabrication; contact holes sidewall surface conductivity; high-aspect contact holes; on-wafer monitoring; sidewall-deposited polymer; Conductivity; Electrodes; Electrons; Etching; Monitoring; Plasma applications; Plasma measurements; Plasma temperature; Semiconductor films; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2002 7th International Symposium on
  • Print_ISBN
    0-9651577-7-6
  • Type

    conf

  • DOI
    10.1109/PPID.2002.1042619
  • Filename
    1042619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380624