Title :
High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation
Author :
Huang, Chiao-Ti ; Li, Jiun-Yun ; Sturm, James C.
Author_Institution :
Dept. of Electr. Eng., Princeton Inst. for the Sci. & Technol. of Mater. Princeton Univ., Princeton, NJ, USA
Abstract :
In this study, the suppression of phosphorus segregation by low temperature (525°C) cap layer growth results in high breakdown voltage of Schottky gates on modulation-doped Si/SiGe heterostructures. The wide window to deplete two-dimensional electron gas (2DEGs) via negative bias with very low leakage thus enables Schottky split gate quantum devices.
Keywords :
Ge-Si alloys; Schottky barriers; electric breakdown; electron gas; Schottky gate; Schottky split gate quantum device; Si-SiGe; high breakdown voltage Schottky gating; low temperature cap layer; negative bias; phosphorus surface segregation; temperature 525 C; two-dimensional electron gas; HEMTs; Leakage current; Logic gates; MODFETs; Quantum dots; Silicon; Silicon germanium;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222514
