DocumentCode
2380632
Title
High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation
Author
Huang, Chiao-Ti ; Li, Jiun-Yun ; Sturm, James C.
Author_Institution
Dept. of Electr. Eng., Princeton Inst. for the Sci. & Technol. of Mater. Princeton Univ., Princeton, NJ, USA
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
2
Abstract
In this study, the suppression of phosphorus segregation by low temperature (525°C) cap layer growth results in high breakdown voltage of Schottky gates on modulation-doped Si/SiGe heterostructures. The wide window to deplete two-dimensional electron gas (2DEGs) via negative bias with very low leakage thus enables Schottky split gate quantum devices.
Keywords
Ge-Si alloys; Schottky barriers; electric breakdown; electron gas; Schottky gate; Schottky split gate quantum device; Si-SiGe; high breakdown voltage Schottky gating; low temperature cap layer; negative bias; phosphorus surface segregation; temperature 525 C; two-dimensional electron gas; HEMTs; Leakage current; Logic gates; MODFETs; Quantum dots; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location
Berkeley, CA
Print_ISBN
978-1-4577-1864-9
Electronic_ISBN
978-1-4577-1863-2
Type
conf
DOI
10.1109/ISTDM.2012.6222514
Filename
6222514
Link To Document