DocumentCode
2380633
Title
Impact of Strain Engineering on Nanoscale Ge PMOSFET
Author
Hsieh, B.-F. ; Chang, S.T. ; Huang, M.-H.
Author_Institution
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
fYear
2012
fDate
4-6 June 2012
Firstpage
1
Lastpage
2
Abstract
This work presents an analysis via simulation of the width dependence of the stress components (longitudinal, vertical and transverse) in the PMOS channel region, and its influence on electron mobility. A 3D ANSYS study on the stress distribution is performed; and the impact of channel width and channel length on the device performance such as mobility gain is explored.
Keywords
MOSFET; electron mobility; elemental semiconductors; germanium; nanoelectronics; 3D ANSYS; PMOS channel region; channel length; channel width; electron mobility; mobility gain; nanoscale Ge PMOSFET; strain engineering; stress components; stress distribution; width dependence; Finite element methods; Logic gates; MOSFET circuits; Metals; Simulation; Strain; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location
Berkeley, CA
Print_ISBN
978-1-4577-1864-9
Electronic_ISBN
978-1-4577-1863-2
Type
conf
DOI
10.1109/ISTDM.2012.6222515
Filename
6222515
Link To Document