Title :
Improving the On-Resistance of FETs for Power Applications
Author :
Isemann, H. ; Fischer, I. ; Hähnel, D. ; Oehme, M. ; Schulze, J.
Author_Institution :
Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
Low on-resistances (RON) has been applied to different power MOSFETs and IGBTs, universally to achieve low power consumption. The focus is on the optimization of two contributing factors to the RON of vertical power-MOSFET and IGBT-the resistance of the channel and of the substrate. The goal of applying these improvements to an IGBT structure have been performed and described.
Keywords :
electric resistance; insulated gate bipolar transistors; power MOSFET; FET on-resistance; IGBT structure; Power Applications; channel resistance; power MOSFET; power consumption; Doping; FETs; Fabrication; Insulated gate bipolar transistors; P-i-n diodes; Resistance; Substrates;
Conference_Titel :
Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
Conference_Location :
Berkeley, CA
Print_ISBN :
978-1-4577-1864-9
Electronic_ISBN :
978-1-4577-1863-2
DOI :
10.1109/ISTDM.2012.6222516
