• DocumentCode
    2380637
  • Title

    Improving the On-Resistance of FETs for Power Applications

  • Author

    Isemann, H. ; Fischer, I. ; Hähnel, D. ; Oehme, M. ; Schulze, J.

  • Author_Institution
    Inst. of Semicond. Eng., Univ. of Stuttgart, Stuttgart, Germany
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Low on-resistances (RON) has been applied to different power MOSFETs and IGBTs, universally to achieve low power consumption. The focus is on the optimization of two contributing factors to the RON of vertical power-MOSFET and IGBT-the resistance of the channel and of the substrate. The goal of applying these improvements to an IGBT structure have been performed and described.
  • Keywords
    electric resistance; insulated gate bipolar transistors; power MOSFET; FET on-resistance; IGBT structure; Power Applications; channel resistance; power MOSFET; power consumption; Doping; FETs; Fabrication; Insulated gate bipolar transistors; P-i-n diodes; Resistance; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International
  • Conference_Location
    Berkeley, CA
  • Print_ISBN
    978-1-4577-1864-9
  • Electronic_ISBN
    978-1-4577-1863-2
  • Type

    conf

  • DOI
    10.1109/ISTDM.2012.6222516
  • Filename
    6222516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380637