DocumentCode
2380670
Title
Characterization of microtrenching on 0.13μm NMOS and PMOS transistors using DAHC and edge FN stress
Author
Chua, C.S. ; Chor, E.F. ; Ang, C.H. ; Tan, J. ; Goh, F. ; Yu, J. ; Pradeep, Y. ; See, A. ; Chan, L.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fYear
2002
fDate
2002
Firstpage
110
Lastpage
113
Abstract
The degradation of 0.13μm NMOS and PMOS transistors caused by microtrenching (μT) under hot-carrier and edge FN stress is studied. DAHC stress was found to be a sensitive technique for characterizing the NMOS transistors while edge FN stress was more suitable for the PMOS transistors. Interface state generation was also identified as the dominant degradation mechanism.
Keywords
MOS integrated circuits; MOSFET; interface states; 0.13 micron; NMOS transistors; PMOS transistors; dominant degradation mechanism; drain avalanche hot carrier stress; edge Fowler-Nordheim stress; interface state generation; microtrenching characterization; transistor degradation; Degradation; Drain avalanche hot carrier injection; Electrons; Etching; Ground penetrating radar; Hot carriers; MOS devices; MOSFETs; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN
0-9651577-7-6
Type
conf
DOI
10.1109/PPID.2002.1042621
Filename
1042621
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