• DocumentCode
    2380684
  • Title

    Plasma induced damage from via etching in pMOSFETs

  • Author

    Cellere, G. ; Valentin, M.G. ; Baraldo, A. ; Paccagnella, A.

  • Author_Institution
    Dipt. di Elettronica e Inf., Padova Univ., Italy
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    In this paper, we present a study of micro breakdown (MB), soft breakdown (SB), and conventional hard breakdown (HB) on pMOSFET devices. In particular, we report evident damage due to via etching.
  • Keywords
    MOSFET; plasma materials processing; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; sputter etching; conventional hard breakdown; micro breakdown; pMOSFET devices; pMOSFETs; plasma induced damage; soft breakdown; via etching; Electric breakdown; Etching; Fingers; Leakage current; MOSFETs; Plasma applications; Plasma devices; Plasma materials processing; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2002 7th International Symposium on
  • Print_ISBN
    0-9651577-7-6
  • Type

    conf

  • DOI
    10.1109/PPID.2002.1042622
  • Filename
    1042622
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380684