DocumentCode
2380704
Title
Optimum IR drop models for estimation of metal resource requirements for power distribution network
Author
Bhooshan, Rishi ; Rao, Bindu P
Author_Institution
Texas Instruments India Ltd, Bangalore-560093, India
fYear
2007
fDate
15-17 Oct. 2007
Firstpage
292
Lastpage
295
Abstract
In this paper, we present closed form IR drop models for power distribution network in N-metal layer system for wire-bond and flip-chip packages, given design constraints such as chip power dissipation, total static IR drop budget and power supply voltage along with manufacturability and EM constraints as per the technology. The models proposed empowers designers to perform trade-off analysis for effective metal resource utilization in the power distribution network and meeting design specific signal routing needs in desired metal layers. The power distribution network designed using the proposed models have been verified for EM and IR drop on 90nm, 65nm and 45nm designs with industry standard EMIR analysis tool and are within 1–5% of error limit for both wire- bond and flip-chip designs.
Keywords
Packaging; Power dissipation; Power supplies; Power system modeling; Power systems; Pulp manufacturing; Signal analysis; Signal design; Virtual manufacturing; Voltage; EM- Electro-migration; PDN- Power Distributions Network; PG- Power and Ground; SC- Bump Square cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Very Large Scale Integration, 2007. VLSI - SoC 2007. IFIP International Conference on
Conference_Location
Atlanta, GA, USA
Print_ISBN
978-1-4244-1710-0
Electronic_ISBN
978-1-4244-1710-0
Type
conf
DOI
10.1109/VLSISOC.2007.4402515
Filename
4402515
Link To Document