Temperature effect on antenna protection strategy for plasma-process induced charging damage

Author

Wang, Zhichun ; Scarpa, Andrea ; Smits, Sander ; Salm, Cora ; Kuper, Fred

Author_Institution

Semicond. Components Group, Twente Univ., Enschede, Netherlands

fYear

2002

fDate

2002

Firstpage

134

Lastpage

137

Abstract

The leakage current of different drain-well diodes for plasma-charging protection has been simulated at high temperature. The simulation shows that the high ambient temperature, especially during plasma deposition process, enormously enhances the efficacy of the protection diodes in protecting thin oxide. The efficacy of different diodes has been compared by simulation and experiment. Based on our discoveries, a strategic protection scheme for plasma-process induced damage (PPID) is proposed.

Keywords

antennas in plasma; leakage currents; plasma deposition; protection; semiconductor device models; semiconductor diodes; sputter etching; PPID; antenna protection strategy; drain-well diodes; high temperature; leakage current; plasma deposition; plasma-charging protection; plasma-process induced charging damage; temperature effect; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma simulation; Plasma temperature; Protection; Semiconductor diodes; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma- and Process-Induced Damage, 2002 7th International Symposium on

Print_ISBN

0-9651577-7-6

Type

conf

DOI

10.1109/PPID.2002.1042627

Filename

1042627