DocumentCode :
2380776
Title :
Measurement based behavioral modeling of impedance dependent transistor non-linearity
Author :
Kinzel, David ; Fennelly, Michael ; Wandrei, David
Author_Institution :
ATN Microwave Inc., North Billerica, MA, USA
fYear :
1997
fDate :
11-13 Aug 1997
Firstpage :
114
Lastpage :
116
Abstract :
A novel modeling approach is presented that utilizes load pull measurements at a number of known terminations and fits a data based model of the measured parameter as a function of the fundamental and harmonic termination. The techniques utilizes a solid-state, single load pull tuner without a multiplexer or harmonic loops. It creates a general equation of device performance with predictive abilities. This paper presents the measurement system, the modeling approach, and the measured and predicted results
Keywords :
electric impedance; harmonic analysis; semiconductor device models; semiconductor device testing; tuning; data based model; device performance; fundamental termination; harmonic termination; impedance dependent transistor nonlinearity; load pull measurements; measured parameter; measured results; measurement based behavioral modeling; measurement system; predicted results; solid-state single load pull tuner; Frequency; Impedance measurement; Microwave measurements; Microwave transistors; Power generation; Power measurement; Power system harmonics; Power system modeling; Predictive models; Tuners;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Communications Conference, 1997., Proceedings
Conference_Location :
Boulder, CO
Print_ISBN :
0-7803-4194-5
Type :
conf
DOI :
10.1109/WCC.1997.622259
Filename :
622259
Link To Document :
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