DocumentCode
2380807
Title
Negative-bias-temperature-instability (NBTI) for p/sup +/-gate pMOSFET with ultra-thin plasma-nitrided gate dielectrics
Author
Tan, Shyue-Seng ; Chen, Tupei ; Ang, Chew-Hoe ; Lek, Chun-Meng ; Lin, Wenhe ; Zheng, Jie Zhen ; See, Alex ; Chan, Lap
Author_Institution
Nanyang Technological University
fYear
2002
fDate
5-7 June 2002
Firstpage
146
Lastpage
149
Keywords
CMOS technology; Dielectrics; MOSFET circuits; Niobium compounds; Plasma applications; Plasma materials processing; Plasma temperature; Thermal stresses; Threshold voltage; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Conference_Location
Maui, HI, USA
Print_ISBN
0-9651577-7-6
Type
conf
DOI
10.1109/PPID.2002.1042630
Filename
1042630
Link To Document