Title :
The effect of gate recess width on the linearity of GaAs MESFETs
Author :
Tkachenko, Y. ; Bartle, D. ; DiCarlo, P. ; Mitchell, D. ; Petzold, D.
Author_Institution :
Alpha Industries Inc., Woburn, MA, USA
Abstract :
The width of the gate recess was found to greatly effect the linearity of GaAs MESFETs under class AB operation at 850 MHz. The MESFETs with gate-recess spacing larger than 105 nm exhibit poor 3rd order intermodulation and significantly different 5th order intermodulation product dependence on the output power. Good correlation of the discrete device data with the digital amplifier circuit performance was obtained. This work provides insight into a critical parameter for optimum performance of high linearity amplifier applications
Keywords :
III-V semiconductors; UHF power amplifiers; digital radio; gallium arsenide; intermodulation; linear network analysis; power amplifiers; radio equipment; semiconductor device models; 3rd order intermodulation; 5th order intermodulation product dependence; 850 MHz; GaAs; GaAs MESFETs; class AB operation; digital amplifier circuit performance; discrete device data; gate recess width; high linearity amplifier applications; linearity; optimum performance; output power; Circuit optimization; Gallium arsenide; Gold; Linearity; MESFETs; Optical amplifiers; Power amplifiers; Power generation; Silicon; Wireless communication;
Conference_Titel :
Wireless Communications Conference, 1997., Proceedings
Conference_Location :
Boulder, CO
Print_ISBN :
0-7803-4194-5
DOI :
10.1109/WCC.1997.622262
