The effect of gate recess width on the linearity of GaAs MESFETs

Author

Tkachenko, Y. ; Bartle, D. ; DiCarlo, P. ; Mitchell, D. ; Petzold, D.

Author_Institution

Alpha Industries Inc., Woburn, MA, USA

fYear

1997

fDate

11-13 Aug 1997

Firstpage

126

Lastpage

128

Abstract

The width of the gate recess was found to greatly effect the linearity of GaAs MESFETs under class AB operation at 850 MHz. The MESFETs with gate-recess spacing larger than 105 nm exhibit poor 3rd order intermodulation and significantly different 5th order intermodulation product dependence on the output power. Good correlation of the discrete device data with the digital amplifier circuit performance was obtained. This work provides insight into a critical parameter for optimum performance of high linearity amplifier applications

Keywords

III-V semiconductors; UHF power amplifiers; digital radio; gallium arsenide; intermodulation; linear network analysis; power amplifiers; radio equipment; semiconductor device models; 3rd order intermodulation; 5th order intermodulation product dependence; 850 MHz; GaAs; GaAs MESFETs; class AB operation; digital amplifier circuit performance; discrete device data; gate recess width; high linearity amplifier applications; linearity; optimum performance; output power; Circuit optimization; Gallium arsenide; Gold; Linearity; MESFETs; Optical amplifiers; Power amplifiers; Power generation; Silicon; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Communications Conference, 1997., Proceedings

Conference_Location

Boulder, CO

Print_ISBN

0-7803-4194-5

Type

conf

DOI

10.1109/WCC.1997.622262

Filename

622262