Title :
Power HEMT CAD for wireless communications applications
Author :
Albasha, Lutfi ; Snowden, Christopher M. ; Pollard, Roger D.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
This paper presents a model for the breakdown process in power HEMT devices used in mobile communications systems. The model is integrated into a fast quasi-two-dimensional physical simulator. The work is based on a study of the complex interactions between the different breakdown mechanisms, including avalanche, and the influence of design parameters. The model takes account of the tunnelling effects in the region of the gate metallization. A new thermal model is included which monitors the channel temperature and controls the tunnelling mechanism. The design and measurements of 38 GHz MMIC power amplifiers designed for use in a QPSK communications link are presented
Keywords :
HEMT integrated circuits; circuit CAD; electric breakdown; integrated circuit metallisation; integrated circuit modelling; land mobile radio; millimetre wave power amplifiers; quadrature phase shift keying; radio equipment; semiconductor device metallisation; semiconductor device models; 38 GHz; 38 GHz MMIC power amplifiers; QPSK communications link; avalanche; breakdown process; channel temperature; design parameters; gate metallization; mobile communications; power HEMT CAD; quasi-two-dimensional physical simulator; thermal model; tunnelling effects; wireless communications applications; Avalanche breakdown; Communication system control; Electric breakdown; HEMTs; Metallization; Mobile communication; Power system modeling; Temperature control; Tunneling; Wireless communication;
Conference_Titel :
Wireless Communications Conference, 1997., Proceedings
Conference_Location :
Boulder, CO
Print_ISBN :
0-7803-4194-5
DOI :
10.1109/WCC.1997.622263
