Title :
Development of the damage evaluation technology of a low-k film by surface photo voltage
Author :
Yunogami, Takashi ; Inukai, Kazuaki ; Matsumoto, Isao ; Vu, Bao ; Ikarashi, Makoto ; Kawamura, Koiciro
Author_Institution :
Semicond. Leading Edge Technol. Inc., Yokohama, Japan
Abstract :
The un-contacting damage measurement technology of a low-k film by surface photo voltage (SPV) measurement using Quantox made from KLA-Tencor was developed. By SPV measurement, it was found that hysteresis exists in the low-k film, and that this hysteresis corresponded with the damage of the low-k film, i.e., the k-value increases. By using this phenomenon, the un-contacting in-line monitor of the low-k film is realized.
Keywords :
dielectric hysteresis; dielectric materials; dielectric thin films; ion beam effects; nondestructive testing; permittivity; surface photovoltage; MSQ; Quantox; SPV measurement; SiO2; damage evaluation technology; dielectric hysteresis; low-k film; plasma irradiation; porous-SiLK; surface photo voltage; un-contacting damage measurement technology; Capacitance measurement; Capacitance-voltage characteristics; Hysteresis; Monitoring; Plasma measurements; Pollution measurement; Probes; Semiconductor films; Voltage measurement; Wiring;
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
DOI :
10.1109/PPID.2002.1042633
