• DocumentCode
    2380910
  • Title

    The implications of technology scaling on plasma-induced damage

  • Author

    Suehle, John ; Giapis, Konstantinos ; Sery, George ; Eriguchi, Koji ; Hook, Terence ; Cheung, Kin P.

  • Author_Institution
    NIST
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    169
  • Lastpage
    172
  • Keywords
    Annealing; Diodes; High K dielectric materials; High-K gate dielectrics; NIST; Plasma devices; Plasma materials processing; Plasma measurements; Potential energy; System-on-a-chip;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2002 7th International Symposium on
  • Print_ISBN
    0-9651577-7-6
  • Type

    conf

  • DOI
    10.1109/PPID.2002.1042636
  • Filename
    1042636
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2380910