DocumentCode :
2380910
Title :
The implications of technology scaling on plasma-induced damage
Author :
Suehle, John ; Giapis, Konstantinos ; Sery, George ; Eriguchi, Koji ; Hook, Terence ; Cheung, Kin P.
Author_Institution :
NIST
fYear :
2002
fDate :
2002
Firstpage :
169
Lastpage :
172
Keywords :
Annealing; Diodes; High K dielectric materials; High-K gate dielectrics; NIST; Plasma devices; Plasma materials processing; Plasma measurements; Potential energy; System-on-a-chip;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2002 7th International Symposium on
Print_ISBN :
0-9651577-7-6
Type :
conf
DOI :
10.1109/PPID.2002.1042636
Filename :
1042636
Link To Document :
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