Smoothening of thin film surfaces

Author

Panin, Alexey ; Shugurov, Artur

Author_Institution

Inst. of Strength Phys. & Mater. Sci., Acad. of Sci., Tomsk, Russia

Volume

3

fYear

2000

fDate

2000

Firstpage

209

Abstract

Surface morphologies of thin dielectric films are studied with atomic force microscopy. It is shown that the deposition temperature greatly affects the structure and the surface roughness of the films. Films deposited at room temperature are found to be amorphous and smooth. Films grown at 200°C are amorphous, but also contain single inclusions of crystallites. Finally, fine grain films with quasiperiodic wave-like surface topography are grown at 300-500°C. The introduction of S and Se atoms is observed to suppress 3D island growth and to decrease the surface roughness of the films. Both root-mean-square roughness and fractal dimension are proposed to characterize film surfaces

Keywords

atomic force microscopy; chemical vapour deposition; dielectric thin films; insulating thin films; island structure; multilayers; surface diffusion; surface topography; wetting; 200 C; 300 to 500 C; amorphous smooth films; atomic force microscopy; crystallite inclusions; deposition temperature effect; fine grain films; fractal dimension; fragmented mesostructures; island growth suppression; multilayers; quasiperiodic wave-like surface topography; root-mean-square roughness; surface morphologies; surface roughness; surface smoothening; surfactants effect; thin dielectric films; thin film surfaces; Amorphous materials; Atomic force microscopy; Atomic layer deposition; Dielectric thin films; Rough surfaces; Surface morphology; Surface roughness; Surface topography; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2000. KORUS 2000. Proceedings. The 4th Korea-Russia International Symposium on

Conference_Location

Ulsan

Print_ISBN

0-7803-6486-4

Type

conf

DOI

10.1109/KORUS.2000.866086

Filename

866086