• DocumentCode
    2381299
  • Title

    Improved step coverage of silane-based PECVD nitride and oxynitride passivation films

  • Author

    Pang, Bin ; Cheung, David ; Petro, William G.

  • Author_Institution
    Appl. Mater. Inc., Santa Clara, CA, USA
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    423
  • Lastpage
    425
  • Abstract
    The effects of gas flow and electrode spacing on the step coverage of silane-based nitride and oxynitride films formed by plasma-enhanced chemical-vapor deposition have been studied. It was found that the sidewall step coverage and sidewall film wet etch rate can be improved by varying these process parameters
  • Keywords
    VLSI; integrated circuit technology; metallisation; passivation; plasma CVD; PECVD; Si3N4 passivation films; SiH4 gas; SiOxNy passivation films; VLSI; electrode spacings effects; gas flow effects; multilevel metallisation; plasma-enhanced chemical-vapor deposition; process parameters; sidewall film wet etch rate; sidewall step coverage; Aluminum; Electrodes; Hafnium; Passivation; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Scanning electron microscopy; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153045
  • Filename
    153045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2381299