Title :
Improvement of window profile and metal step coverage for submicron CMOS devices
Author :
Yu, D.C.H. ; Lee, K.H.
Author_Institution :
AT&T Bell Labs., Allentown, PA, USA
Abstract :
Presents the work the authors have done to continuously improve an existing reliable window process. They demonstrate a technique which opens a window by blanket plasma reactive ion etch (RIE). Very smooth window profile is obtained and aluminum step coverage in the window is improved
Keywords :
CMOS integrated circuits; VLSI; aluminium; metallisation; ohmic contacts; sputter etching; 1 micron; Al step coverage; VLSI; blanket plasma reactive ion etch; contact window profile improvement; metal step coverage; multilevel metallisation; reliable window process; silicides compatible; smooth window profile; submicron CMOS devices; Aluminum; Dielectrics; Etching; Glass; Plasma applications; Plasma devices; Plugs; Surface topography; Tungsten; Windows;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153047
