61 GHz millimeter wave voltage variable attenuator based on flip-chip mounted PIN-diodes

Author

Mann, Sebastian ; Lurz, Fabian ; Lindner, S. ; Barbon, F. ; Linz, S. ; Weigel, Robert ; Koelpin, Alexander

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2014

fDate

16-18 June 2014

Firstpage

1

Lastpage

4

Abstract

Voltage Variable Attenuators play a major role in radio frequency system design. In this paper, a voltage variable attenuator concept suitable for the 61GHz ISM band is introduced and discussed. The proposed reflection type voltage variable attenuator has a maximum attenuation of 32 dB in the 61 GHz ISM-band range, and a low phase-shift of less than 10° for low and medium attenuation values. Furthermore, a bias network is presented featuring low reflection loss, and robustness against manufacturing tolerances. For verification purposes, a voltage variable attenuator as well as a reference transmission line have been fabricated and measured.

Keywords

p-i-n diodes; waveguide attenuators; bias network; flip-chip mounted PIN-diodes; frequency 61 GHz; phase-shift; radio frequency system design; reference transmission line; reflection loss; reflection type voltage variable attenuator; Attenuation; Attenuation measurement; Attenuators; Impedance; Microwave integrated circuits; Microwave theory and techniques; Transmission line measurements; 61 GHz; attenuator; bias network; p-i-n diode; reflection type; variable attenuator;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on

Conference_Location

Gdansk

Print_ISBN

978-617-607-553-0

Type

conf

DOI

10.1109/MIKON.2014.6899966

Filename

6899966