DocumentCode
2381814
Title
Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications
Author
Pan, Ci-Ling
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
2
fYear
1999
fDate
1999
Firstpage
367
Abstract
GaAs bombarded with arsenic ions at multiple dosages with various implantation energies were used to fabricate ultrafast photoconductive switches with picosecond response and bandwidth exceeding 500 MHz
Keywords
III-V semiconductors; arsenic; gallium arsenide; ion implantation; microwave photonics; millimetre wave devices; photoconducting switches; semiconductor doping; 500 MHz; As-implanted GaAs; GaAs:As; GaAs:As photoconductive switches; implantation energies; millimeter wave applications; multi-energy ion-implanted switches; multiple dosages; picosecond response; ultrafast applications; ultrawide bandwidth; Charge carrier lifetime; Gallium arsenide; Millimeter wave technology; Molecular beam epitaxial growth; Optical switches; Personal communication networks; Photoconducting devices; Photoconductivity; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1999. SBMO/IEEE MTT-S, APS and LEOS - IMOC '99. International
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-5807-4
Type
conf
DOI
10.1109/IMOC.1999.866136
Filename
866136
Link To Document