Title :
Analytical extraction of the noise sources characteristics of an SiGe HBT
Author :
Pasquet, Daniel ; Descamps, Philippe ; Lesenechal, Dominique
Author_Institution :
LaMIPS, Colombelles, France
Abstract :
After the measurement of the S-parameters and the noise power at the output of an HBT, the impedance matrix and the correlation impedance matrix are calculated. A very simple equivalent circuit is used. All the elements and the noise source characteristics are deduced from these matrices.
Keywords :
Ge-Si alloys; S-parameters; equivalent circuits; heterojunction bipolar transistors; impedance matrix; semiconductor device noise; HBT; S-parameters; SiGe; correlation impedance matrix; equivalent circuit; heterojunction bipolar transistors; noise power; noise sources analytical extraction; Correlation; Correlation coefficient; Heterojunction bipolar transistors; Impedance; Integrated circuit modeling; Noise; Noise measurement; SiGe HBT; noise modeling; noise parameters; noise sources; parameter extraction;
Conference_Titel :
Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on
Conference_Location :
Gdansk
Print_ISBN :
978-617-607-553-0
DOI :
10.1109/MIKON.2014.6899981
