• DocumentCode
    2382063
  • Title

    H2O-TEOS plasma-CVD realizing dielectrics having a smooth surface

  • Author

    Hatanaka, M. ; Mizushima, Y. ; Hataishi, O. ; Furumura, Y.

  • Author_Institution
    Semicond. Process Lab., Fujitsu VLSI Ltd., Mie, Japan
  • fYear
    1991
  • fDate
    11-12 Jun 1991
  • Firstpage
    435
  • Lastpage
    441
  • Abstract
    The authors have grown planarized dielectrics by plasma-enhanced chemical vapor deposition from an H2O and Si(OC2H 5)4 (tetraethylorthosilicate: TEOS) gas system (H 2O-TEOS PLASMA-CVD). The grown dielectrics have smooth surfaces similar to spin-on-glass (SOG) films, and fill grooves down to 0.2 μm in width. This paper reports characteristics and planarization mechanism of H2O-TEOS PLASMA-CVD dielectrics
  • Keywords
    VLSI; dielectric thin films; metallisation; plasma CVD; 0.2 micron; PECVD; TEOS; VLSI; characteristics; fill grooves; interlevel dielectric planarization; multilevel metallisation; planarization mechanism; planarized dielectrics; plasma-enhanced chemical vapor deposition; smooth surface dielectrics; tetraethylorthosilicate; Dielectrics; Electrodes; Inductors; Planarization; Plasma chemistry; Plasma properties; Plasma sources; Plasma temperature; Radio frequency; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-87942-673-X
  • Type

    conf

  • DOI
    10.1109/VMIC.1991.153049
  • Filename
    153049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2382063