Biased ECR CVD oxide deposition using TEOS and TMCTS

Author

Pai, C.S. ; Miner, J.F. ; Foo, P.D.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1991

fDate

11-12 Jun 1991

Firstpage

442

Lastpage

444

Abstract

The authors have studied oxide deposition in a biased ECR CVD reactor using TEOS (tetraethylorthosilicate) and TMCTS (tetramethylcyclotetrasiloxane) as Si sources. Oxide films with good material quality are deposited as long as O₂/TEOS and O₂/TMCTS flow rate ratios are greater than 2 and 3 respectively. The deposition rate using TMCTS is about four times higher than using TEOS under similar condition. The step coverage of oxide is found to be excellent when additional RF bias is applied on the substrate during the deposition. They have demonstrated that trenches with high aspect ratios (>1.5) can be filled without voids

Keywords

VLSI; dielectric thin films; metallisation; plasma CVD; plasma radiofrequency heating; silicon compounds; SiO₂ deposition; TEOS; TMCTS; VLSI; additional RF bias; biased ECR CVD reactor; deposition rate; flow rate ratios; interlevel dielectrics; low temperature processing; multilevel metallisation; safety; step coverage of oxide; tetraethylorthosilicate; tetramethylcyclotetrasiloxane; trench filling capability; Atomic layer deposition; Dielectric substrates; Fault location; Filling; Inductors; Microwave generation; Safety; Semiconductor films; Temperature; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153050

Filename

153050