Title :
Wavelength dependence of catastrophic optical damage threshold in 980 nm semiconductor diode lasers
Author :
Lock, Daren ; Sweeney, Stephen J. ; Adams, Alfred R.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
We investigate the wavelength dependence of the catastrophic optical damage current in 980 nm lasers. Using high pressure and low temperature techniques, we find an intrinsic dependence of this threshold on wavelength.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-temperature techniques; indium compounds; laser beam effects; semiconductor lasers; waveguide lasers; 980 nm; GaAs-AlGaAs; InGaAs-InP; buried heterostructure lasers; catastrophic optical damage threshold; high pressure technique; low temperature technique; ridge waveguide lasers; semiconductor diode lasers; Erbium-doped fiber lasers; Gallium arsenide; Heating; Indium phosphide; Laser theory; Power generation; Power lasers; Semiconductor diodes; Semiconductor lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251888
