Title :
Systematic procedure for load-pull X-parameters measurements for high-efficiency GaN HEMT PA design
Author :
Zawada, Pawel ; Barmuta, Pawel ; Nielsen, Troels S. ; Schreurs, Dominique ; Lewandowski, Andreas
Author_Institution :
Inst. of the Electron. Syst., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
In this paper, the X-parameters load-pull measurements for high-efficiency multi-band power amplifier design are described. A commercially available 10 W Cree CGH40010F GaN HEMT is used for characterization at three harmonics of the typical telecommunication frequencies: 1.8 GHz, 2.1 GHz, 2.45 GHz, and 2.7 GHz. The measurement setup and procedure are described. Special attention is being paid to the calibration methods in order to ensure the validity of the X-parameters. Using load-dependent X-parameters the optimal large signal operating point for each fundamental frequency was found. For all the bands output power over 10 W and power-added efficiency over 70 % were obtained.
Keywords :
III-V semiconductors; UHF measurement; UHF power amplifiers; calibration; gallium compounds; high electron mobility transistors; semiconductor device measurement; wide band gap semiconductors; Cree CGH40010F HEMT; GaN; calibration method; frequency 1.8 GHz; frequency 2.1 GHz; frequency 2.45 GHz; frequency 2.7 GHz; high-efficiency HEMT PA design; high-efficiency multi-band power amplifier design; load-pull X-parameter measurement; power 10 W; power-added efficiency; Calibration; Frequency measurement; Harmonic analysis; Impedance; Load modeling; Power measurement; Tuners; Nonlinear vector network analyzer; X-parameters; load pull; nonlinear measurements; power amplifier;
Conference_Titel :
Microwaves, Radar, and Wireless Communication (MIKON), 2014 20th International Conference on
Conference_Location :
Gdansk
Print_ISBN :
978-617-607-553-0
DOI :
10.1109/MIKON.2014.6900008
