Title :
Back-end induced IMO layer charging
Author :
Liu, L.M. ; Lin, K.M. ; Ying, S.L. ; Fang, C.H. ; Liaw, M.H. ; Lin, J.J. ; Tsai, L.S. ; Hsu, S.L. ; Lin, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
Abstract :
Field Inversion generated in a CMOS double metal process due to the back-end process was studied. Generated positive charges were related to reaction between PETEOS and noncarbon based SOG during alloying. Replacing PETEOS with Si-rich PETEOS or PEOXIDE eliminated the charging problems and improved yield
Keywords :
CMOS integrated circuits; VLSI; dielectric thin films; metallisation; plasma CVD; CMOS double metal process; PECVD TEOS; PECVD oxide; SOG; VLSI; back-end process; induced IMO layer charging; multilevel metallisation; Alloying; Application specific integrated circuits; CMOS process; Degradation; Etching; Leakage current; Manufacturing industries; Passivation; Semiconductor device manufacture; Testing;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-87942-673-X
DOI :
10.1109/VMIC.1991.153053
