Reliability of different levels of cascaded H-Bridge inverter: An investigation and comparison

Author

Hardas, R.G. ; Munshi, A.P. ; Kadwane, S.G.

Author_Institution

Dept. of Electr. Eng., Yeshwantrao Chavan Coll. of Eng., Nagpur, India

fYear

2014

fDate

8-10 May 2014

Firstpage

349

Lastpage

354

Abstract

This paper presents the comparative analysis of reliability of different levels of cascaded H-Bridge inverter topologies. Failure of single IGBT in a cell of H-Bridge can determine the reliability of the complete cell. Military Handbook-217F provides basis for computation of reliability of semiconductors. This method is not applicable for reliability evaluation of IGBT. To determine the temperature cycles of IGBT, thermal impedance model is developed and power cycles are obtained by using transfer function in MATLAB simulation. By Coffin-Manson fatigue life relationship, the number of temperature cycles is detected by MATLAB programming. An algorithm is used to correlate number of temperature cycles with failure rate. Mean time to failure (MTTF) of each model is compared. It was observed that reliability increases with increase in number of levels of multilevel inverter.

Keywords

bridge circuits; failure analysis; insulated gate bipolar transistors; invertors; semiconductor device reliability; thermal resistance; transfer functions; Coffin-Manson fatigue life relationship; IGBT failure; MTTF; cascaded H-bridge inverter topology reliability; insulated gate bipolar transistor; mean time to failure; military handbook-217F; power cycle; semiconductor reliability computation; thermal impedance model; transfer function; Bridge circuits; Insulated gate bipolar transistors; MATLAB; Reliability; Stress; Switches; Thermal analysis; Insulated Gate Bipolar transistor (IGBT); Mean time to failure (MTTF); Reliability; temperature cycle; thermal impedance;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Communication Control and Computing Technologies (ICACCCT), 2014 International Conference on

Conference_Location

Ramanathapuram

Print_ISBN

978-1-4799-3913-8

Type

conf

DOI

10.1109/ICACCCT.2014.7019461

Filename

7019461