A study of outgassing from spin-on-glass films used for planarization

Author

Kobayakawa, M. ; Arimatsu, A. ; Yokoyama, F. ; Hirashita, N. ; Ajioka, T.

Author_Institution

Process Technol. Center, OKI Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1991

fDate

11-12 Jun 1991

Firstpage

454

Lastpage

456

Abstract

The outgassing from phosphorus doped spin-on-glass (SOG) film was investigated by thermal desorption spectroscopy (TDS). Water and hydrocarbon were found to be main outgassing species from SOG films. Water desorption from SOG films is classified into three components and two hydrocarbon desorption peaks are also observed. The results reveal that water desorption are related to P-OH and Si-OH components in SOG films. It is necessary to optimize cure condition and phosphorus concentration in SOG films for highly reliable multi-level interconnects

Keywords

VLSI; desorption; dielectric materials; glass; metallisation; reliability; H₂O desorption; P concentration; P2O5-SiO2; PSG films; SOG films; TDS; VLSI; cure condition; hydrocarbon desorption; multilevel metallisation; outgassing; outgassing species; planarization; reliable multi-level interconnects; spin-on-glass films; thermal desorption spectroscopy; water desorption; Degradation; Dielectrics; Hydrocarbons; Infrared heating; Infrared spectra; Mass spectroscopy; Planarization; Research and development; Temperature measurement; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1991, Proceedings., Eighth International IEEE

Conference_Location

Santa Clara, CA

Print_ISBN

0-87942-673-X

Type

conf

DOI

10.1109/VMIC.1991.153054

Filename

153054