Title :
Advanced SPICE modeling of large power IGBT modules
Author :
Azar, R. ; Udrea, F. ; De Silva, M. ; Amaratunga, G. ; Ng, W.T. ; Dawson, F. ; Findlay, W. ; Waind, P.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
An enhanced IGBT model based on the Kraus model with new derivations based on an extra parameter accounting for p-i-n injection was developed to allow simulation of both trench and DMOS IGBT structures. Temperature dependence was also implemented in the model. The model was validated against steady state and transient measurements done on an 800 A, 1.7 kV Dynex IGBT module at 25/spl deg/C and 125/spl deg/C. The Spice model has also shown excellent agreement with mixed mode MEDICI simulations. The Spice model also takes into account for the first time the parasitic thyristor effect allowing the DC and dynamic temperature dependent latchup modeling of power modules as well as their temperature dependent safe operating area.
Keywords :
SPICE; digital simulation; insulated gate bipolar transistors; modules; semiconductor device measurement; semiconductor device models; 1.7 kV; 125 C; 25 C; 800 A; DC modeling; DMOS IGBT structures; Dynex IGBT module; Kraus model; SPICE modeling; dynamic temperature dependent latchup modeling; large power IGBT modules; mixed mode MEDICI simulations; p-i-n injection; parasitic thyristor effect; power modules; steady state measurements; temperature dependence; temperature dependent safe operating area; transient measurements; trench IGBT structures; Cathodes; Equations; Insulated gate bipolar transistors; Medical simulation; PIN photodiodes; Power engineering and energy; SPICE; Steady-state; Temperature dependence; Thyristors;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1042786
