NeoSilicon based nanoelectromechanical information devices

NeoSilicon is a novel functional material consisted of ensemble of nanocrystalline Si quantum dots with controlled dot size and inter-dot distance. Bandgap of NeoSilicon can be controlled by dot size due to the quantum size effect and transport properties are controlled by inter-dot distance due to the tunneling effect. A variety of new applications, such as ballistic electron surface emitting display, high-efficiency light-emitting devices and photovoltaic devices is expected. MOS and NEM hybrid devices are promising for logic, memory and sensing applications, since new functions with ultralow power consumption are expected. Further scaling of NEM devices may provide novel functions based on unique phonon dispersion characteristics in nm-scale. Precise control of charge states in the multiple-coupled quantum dots is essential for spin based quantum information processing. In this talk, I will introduce fabrication of highly integrated nanocrystalline Si dots with uniform size, non-volatile NEM memory devices with a bistable floating gate, NEM-SET hybrid transistors, and unique transport processes in multiple-coupled quantum dot systems.