DocumentCode :
2383608
Title :
Failure Mechanisms and comparative study of ruggedness in IGBTs Devices (IR, IXYS)
Author :
Benbahouche, Ly ; Merabet, A. ; Zegadi, A.
Author_Institution :
Dept. of Opt., Univ. Ferhat Abbas, Setif, Algeria
fYear :
2012
fDate :
13-16 May 2012
Firstpage :
111
Lastpage :
114
Abstract :
This paper present a detailed study of performance of two the most commercially available IGBT for International Rectifier and IXYS e.g. IRGBC40 (S, F,U) and IXGH40N60A, when subjected to two such stressful conditions short circuit operation and unclamped inductive switching and it takes into account specific phenomena limiting its SOA (Safe Operation Area), avalanche, second breakdown as well as latch up. As both these tests conditions are potentially destructive, it is extremely cost efficient to model the device performance under these conditions. The need of a good physics based simulation to carry out a reliability study is pointed out in this paper. An explanation comparison of ruggedness of IRGBC40 (S,F,U) as well as of IXGH40N60A which leads to a fundamental understanding of physics of two devices.
Keywords :
flip-flops; insulated gate bipolar transistors; integrated circuit reliability; rectifiers; IGBT device; IRGBC40 (S, F,U); IXGH40N60A; avalanche; failure mechanism; international rectifier; latch up; physics based simulation; reliability study; safe operation area; second breakdown; short circuit operation; unclamped inductive switching; Electric breakdown; Inductors; Insulated gate bipolar transistors; Integrated circuit modeling; Latches; Logic gates; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
ISSN :
pending
Print_ISBN :
978-1-4673-0237-1
Type :
conf
DOI :
10.1109/MIEL.2012.6222809
Filename :
6222809
Link To Document :
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