Exploring indium antimonide (InSb) as novel channel material for nanoscale devices using simulation approach

In this paper, we have discussed a ballistic nanoscale MOSFET using simulation approach by replacing silicon in the channel by III-V compounds. The channel materials considered are silicon (Si), germanium (Ge), Gallium arsenide (GaAs), Indium arsenide (InAs), Zinc oxide (ZnO), Zinc Sulphide (ZnS), Indium Phosphide (InP) and Indium Antimonide (InSb). The device metrics considered at the nanometer scale are subthreshold swing, Drain induced barrier lowering, on and off current, carrier injection velocity and switching speed. FETToy simulator has been used for the simulations. Various channel materials have been compared and various output parameters obtained & calculated. It has been observed that Indium Antimonide (InSb) has higher on current, higher transconductance, idealistic subthreshold swing, higher output conductance, higher carrier injection velocity and lower voltage gain compared to Silicon, thus, making InSb as a possible candidate to be used as channel material in future nanoscale devices.