DocumentCode
2383915
Title
Investigation of parallel operation of IGBTs
Author
Nelson, Jody J. ; Venkataramanan, Giri ; Beihoff, Bruce C.
Author_Institution
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume
4
fYear
2002
fDate
13-18 Oct. 2002
Firstpage
2585
Abstract
Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.
Keywords
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; IGBT parallel operation; computer simulation; power electronic converters; power levels; power switching devices; reliability; test results; Application software; Costs; Insulated gate bipolar transistors; Manufacturing; Power electronics; Power semiconductor switches; Power system reliability; Shape control; Switching converters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location
Pittsburgh, PA, USA
ISSN
0197-2618
Print_ISBN
0-7803-7420-7
Type
conf
DOI
10.1109/IAS.2002.1042811
Filename
1042811
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