DocumentCode :
2383915
Title :
Investigation of parallel operation of IGBTs
Author :
Nelson, Jody J. ; Venkataramanan, Giri ; Beihoff, Bruce C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Volume :
4
fYear :
2002
fDate :
13-18 Oct. 2002
Firstpage :
2585
Abstract :
Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; IGBT parallel operation; computer simulation; power electronic converters; power levels; power switching devices; reliability; test results; Application software; Costs; Insulated gate bipolar transistors; Manufacturing; Power electronics; Power semiconductor switches; Power system reliability; Shape control; Switching converters; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
ISSN :
0197-2618
Print_ISBN :
0-7803-7420-7
Type :
conf
DOI :
10.1109/IAS.2002.1042811
Filename :
1042811
Link To Document :
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