Title :
Investigation of parallel operation of IGBTs
Author :
Nelson, Jody J. ; Venkataramanan, Giri ; Beihoff, Bruce C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
Widespread application of IGBTs in the past decade has resulted in dramatic improvement in performance of power electronic converters, with simultaneous reduction in costs. In order to further reduce the cost of power electronics systems and improve their reliability it is imperative that techniques for standardized and integrated architectures be adopted, allowing them to be mass-customized for a larger class of applications. One of the key factors that allow broad application of a power switching devices rated at a lower power level across large power levels is ease of parallel operation. This paper is devoted to presenting the results from investigation of parallel operation of IGBT devices. Experimental and computer simulation results are presented.
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device measurement; semiconductor device models; semiconductor device testing; IGBT parallel operation; computer simulation; power electronic converters; power levels; power switching devices; reliability; test results; Application software; Costs; Insulated gate bipolar transistors; Manufacturing; Power electronics; Power semiconductor switches; Power system reliability; Shape control; Switching converters; Voltage;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1042811