Title :
Development of a 1 MHz MOSFET gate-driver for integrated converters
Author :
de Rooij, M.A. ; Strydom, J.T. ; van Wyk, J.D. ; Beamer, P.
Author_Institution :
Electron. Power Conversion Lab., Gen. Electr., Schenactady, NY, USA
Abstract :
A gate-driver capable of switching a MOSFET at 1 MHz is proposed. The main design issues such as propagation delay and pulse width distortion have been addressed. Particular attention has been given to miniaturization of the unit with the aim of integration into an integrated power converter. The design has also focused on extensive protection features for the MOSFET, such as over-current and thermal shutdown. An experimental prototype, which can switch MOSFETs up to 800 V, has been constructed and the results presented.
Keywords :
driver circuits; overcurrent protection; power MOSFET; power convertors; 1 MHz; 800 V; MOSFET gate-driver; MOSFET switching; integrated converters; integrated power converter; miniaturization; overcurrent shutdown; propagation delay; pulse width distortion; thermal shutdown; MOSFET circuits; Power MOSFET; Protection; Pulse modulation; Pulse transformers; Rectifiers; Signal design; Switches; Topology; Voltage;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1042817
