Rapid and efficient method for numerical quantum mechanical simulation of gate-all-around nanowire transistors

In this paper, we propose a 2D numerical quantum simulator for silicon gate-all-around (GAA) nanowire transistors with cylindrical cross-section within the effective mass approximation. The Hamiltonian is expanded in the uncoupled mode space and the nonequilibrium Green´s function (NEGF) formalism is adopted to calculate the electron density and current. An approximated isotropic effective mass is used in conjunction with optimizing the flatband voltage (V_FB) as a fitting parameter. Verification of the results is done through a comparison with those obtained from a published 3D simulator and excellent agreement is achieved.