• DocumentCode
    2384094
  • Title

    Physics-based compact modeling of double-gate graphene field-effect transistor operation

  • Author

    Zebrev, Gennady I. ; Tselykovskiy, Alexander A. ; Turin, Valentin O.

  • Author_Institution
    Dept. of Micro- & Nanoelectron., Nat. Res. Nucl. Univ. MEPHI, Moscow, Russia
  • fYear
    2012
  • fDate
    13-16 May 2012
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    An analytic compact model of large-area double-gate graphene field-effect transistor is presented. As parts of the model, the electrostatics of double-gate structure is described and a unified phenomenological approach for modeling of the two drain current saturation modes is proposed.
  • Keywords
    electrostatics; field effect transistors; fullerene devices; graphene; C; analytic compact model; double-gate graphene field-effect transistor operation; double-gate structure; drain current saturation modes; large-area double-gate graphene field-effect transistor; physics-based compact modeling; unified phenomenological approach; Capacitance; Electric fields; Electrostatics; FETs; Logic gates; Mathematical model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (MIEL), 2012 28th International Conference on
  • Conference_Location
    Nis
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-0237-1
  • Type

    conf

  • DOI
    10.1109/MIEL.2012.6222843
  • Filename
    6222843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2384094