Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation

Author

Chvála, A. ; Donoval, D. ; Marek, J. ; Príbytný, P. ; Molnár, M.

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2012

fDate

13-16 May 2012

Firstpage

255

Lastpage

258

Abstract

New SPICE-like simulation models for a power MOSFET containing a dynamic link between electrical and thermal component descriptions were described. The designed electro-thermal MOSFET model consists of several parts which represent different transistor behavior at different conditions as reverse bias, avalanche breakdown, thermal burning and others. Modified thermal equivalent circuit diagrams were designed taking into account thermal dependence of thermal resistivity. The possibilities and limitations of the new models are analyzed and presented. An unclamped inductive switching (UIS) test was used for comparison and verification of proper behavior of designed MOSFET model.

Keywords

SPICE; circuit simulation; equivalent circuits; power MOSFET; semiconductor device models; semiconductor device testing; thermal conductivity; SPICE-like circuit simulation model; UIS test; avalanche breakdown; dynamic link; electrical component descriptions; electrothermal MOSFET model; modified thermal equivalent circuit diagrams; power MOSFET; power transistor models; reverse bias; temperature dependent parasitic effects; thermal burning; thermal component descriptions; thermal resistivity; unclamped inductive switching test; Integrated circuit modeling; MOSFET circuits; Resistors; Temperature dependence; Temperature measurement; Thermal resistance; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (MIEL), 2012 28th International Conference on

Conference_Location

Nis

ISSN

pending

Print_ISBN

978-1-4673-0237-1

Type

conf

DOI

10.1109/MIEL.2012.6222847

Filename

6222847