Title :
Phonon and lattice dynamics in tri-gate FinFETs on (100) and (110) Si substrates
Author :
Mukherjee, C. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
Abstract :
Phonon spectra and lattice dynamics of silicon and other molecular species are studied in detail using inelastic tunneling spectroscopy (IETS) of p-type Al/SiO2/Si tri-gate FinFETs. Phonon and vibration modes are compared for FinFETs on (100) and (110) silicon substrates. The shift in phonon frequencies depending on the direction of current flow, i.e. substrate orientation, has been demonstrated. Major phonons of Si and SiO2 are identified from the IETS spectra of the tri-gate FinFETs.
Keywords :
MOSFET; aluminium; phonons; silicon compounds; tunnelling spectroscopy; vibrations; Al-SiO2-Si; IETS spectra; current flow direction; inelastic tunneling spectroscopy; lattice dynamics; molecular species; p-type tri-gate FinFET; phonon dynamics; phonon frequencies; phonon spectra; substrate orientation; vibration modes; FinFETs; Lattices; Phonons; Silicon; Spectroscopy; Tunneling; Vibrations; Tri-gate FinFETs; acoustic and optical phonons; inelastic tunneling spectroscopy; lattice dynamics;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222849
