Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III–V nitrides

Author

Kolaklieva, L. ; Chitanov, V. ; Kakanakov, R. ; Russev, S. ; Balashev, K.

Author_Institution

Central Lab. of Appl. Phys., Plovdiv, Bulgaria

fYear

2012

fDate

13-16 May 2012

Firstpage

287

Lastpage

290

Abstract

Four types of Mo-based ohmic contacts with a varied Al and Ti content are developed and investigated regarding the ohmic properties, surface morphology and edge acuity. It is found out that the Ti/Mo/Ti/Au metallization combines the lowest contact resistivity of 8.8×10^-6 Ω.cm² and low surface roughness of 3.8 nm. The presence of Al in the contact composition does not improve the electrical properties and the surface morphology. Its effect on these properties depends strongly on the Ti/Al ratio in the contact composition.

Keywords

III-V semiconductors; aluminium; aluminium compounds; gallium compounds; metallisation; molybdenum; ohmic contacts; semiconductor-metal boundaries; surface morphology; surface roughness; titanium; wide band gap semiconductors; III-V nitrides; Mo-based ohmic contacts; Ti-Mo-Ti-Au-AlGaN-GaN; contact composition; contact resistivity; edge acuity; electrical properties; metallization; morphological properties; ohmic properties; surface morphology; surface roughness; Annealing; Conductivity; Gold; Metallization; Physics; Surface morphology; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (MIEL), 2012 28th International Conference on

Conference_Location

Nis

ISSN

pending

Print_ISBN

978-1-4673-0237-1

Type

conf

DOI

10.1109/MIEL.2012.6222856

Filename

6222856