Title :
Dependence of the electrical and morphological properties on the Ti and Al content in Mo-based ohmic contacts for III–V nitrides
Author :
Kolaklieva, L. ; Chitanov, V. ; Kakanakov, R. ; Russev, S. ; Balashev, K.
Author_Institution :
Central Lab. of Appl. Phys., Plovdiv, Bulgaria
Abstract :
Four types of Mo-based ohmic contacts with a varied Al and Ti content are developed and investigated regarding the ohmic properties, surface morphology and edge acuity. It is found out that the Ti/Mo/Ti/Au metallization combines the lowest contact resistivity of 8.8×10-6 Ω.cm2 and low surface roughness of 3.8 nm. The presence of Al in the contact composition does not improve the electrical properties and the surface morphology. Its effect on these properties depends strongly on the Ti/Al ratio in the contact composition.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; gallium compounds; metallisation; molybdenum; ohmic contacts; semiconductor-metal boundaries; surface morphology; surface roughness; titanium; wide band gap semiconductors; III-V nitrides; Mo-based ohmic contacts; Ti-Mo-Ti-Au-AlGaN-GaN; contact composition; contact resistivity; edge acuity; electrical properties; metallization; morphological properties; ohmic properties; surface morphology; surface roughness; Annealing; Conductivity; Gold; Metallization; Physics; Surface morphology; Temperature measurement;
Conference_Titel :
Microelectronics (MIEL), 2012 28th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4673-0237-1
DOI :
10.1109/MIEL.2012.6222856
