Substrate current control in smart power IC´s with a flexible protection structure

Author

Laine, J.P. ; Gonnard, O. ; Charitat, G. ; Bafleur, M. ; Bertolini, L.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

2002

fDate

2002

Firstpage

36

Lastpage

40

Abstract

Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this paper, an efficient, compact and flexible pull-down protection is proposed against this substrate current. It reduces this latter by more than 8 decades below the injected current level.

Keywords

crosstalk; minority carriers; power MOSFET; power integrated circuits; MOS-based structure; active protection; injected current; latchup; minority carrier injection; negatively biased NLDMOS transistor drain; parasitic current; pull-down protection; smart power ICs; substrate current; Application specific integrated circuits; Automotive applications; Bipolar transistors; CMOS integrated circuits; Crosstalk; Current control; Low voltage; Power system protection; Semiconductor diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002

ISSN

1088-9299

Print_ISBN

0-7803-7561-0

Type

conf

DOI

10.1109/BIPOL.2002.1042882

Filename

1042882