Title :
Substrate current control in smart power IC´s with a flexible protection structure
Author :
Laine, J.P. ; Gonnard, O. ; Charitat, G. ; Bafleur, M. ; Bertolini, L.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
Crosstalks between high voltage power devices and low voltage CMOS devices due to substrate current are a major problem in automotive applications. This parasitic current induces unexpected failure system such as latchup in CMOS circuits. In this paper, an efficient, compact and flexible pull-down protection is proposed against this substrate current. It reduces this latter by more than 8 decades below the injected current level.
Keywords :
crosstalk; minority carriers; power MOSFET; power integrated circuits; MOS-based structure; active protection; injected current; latchup; minority carrier injection; negatively biased NLDMOS transistor drain; parasitic current; pull-down protection; smart power ICs; substrate current; Application specific integrated circuits; Automotive applications; Bipolar transistors; CMOS integrated circuits; Crosstalk; Current control; Low voltage; Power system protection; Semiconductor diodes; Substrates;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
Print_ISBN :
0-7803-7561-0
DOI :
10.1109/BIPOL.2002.1042882
