• DocumentCode
    2385047
  • Title

    Cold plasma-deposited SiO2 and amorphous Teflon AF as electret-coatings for MIS-IL solar cells

  • Author

    Gunther, P. ; Thielemann, C. ; Klemberg-Sapieha, J.E. ; Martinu, L. ; Wertheimer, M.R.

  • Author_Institution
    Inst. for Telecommun. & Electroacoust., Tech. Univ. of Darmstadt, Germany
  • fYear
    1994
  • fDate
    7-9 Sep 1994
  • Firstpage
    1016
  • Lastpage
    1021
  • Abstract
    Novel thin film materials, namely cold plasma-deposited SiO2 and spin-coated Teflon AF have recently been identified as useful electrets; the present paper briefly summarises preparation conditions and material characteristics, the main attention being focused on the applicability of these electrets to MIS-solar cells (Metal Insulator Semiconductor). As a functional coating, the electret passivates the surface and generates a permanent electric field which induces an inversion zone at the silicon surface between the metal lines of the front electrode. It is shown that the I-V-characteristic drastically depends on the polarity and density of the electret space charge. Hence, electrets in solar cell technology can be an important means to increase the device efficiency, and to study silicon-insulator interfaces
  • Keywords
    MIS devices; dielectric thin films; electrets; electrical conductivity; passivation; plasma deposited coatings; polymer films; silicon compounds; solar cells; space charge; I-V-characteristic; MIS-IL solar cells; Si; Si-insulator interfaces; SiO2; Teflon AF; cold plasma-deposited films; device efficiency; electret-coatings; inversion zone; passivation; permanent electric field; polarity; space charge density; spin-coated films; Coatings; Electrets; Inorganic materials; Insulation; Metal-insulator structures; Plasma materials processing; Plasma properties; Semiconductor materials; Semiconductor thin films; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1994. (ISE 8), 8th International Symposium on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-1940-0
  • Type

    conf

  • DOI
    10.1109/ISE.1994.515264
  • Filename
    515264