DocumentCode
2385054
Title
Modeling and characterization of the limits of transistor operation due to quasisaturation
Author
Dutta, Ranadeep ; Thiel, Frank
Author_Institution
Legerity, Austin, TX, USA
fYear
2002
fDate
2002
Firstpage
53
Lastpage
56
Abstract
A first principles analytical model was developed to predict quasisaturation characteristics from process and device parameters. The model uses physical and geometrical attributes only, with no fitting parameters. Measurements from various process splits to characterize the operation limit from quasisaturation as a function of bias, device area and temperature corroborated the model. Also described is a method that was devised to measure quasisaturation at wafer probe.
Keywords
bipolar transistors; semiconductor device measurement; semiconductor device models; device parameters; first principles analytical model; high voltage high speed bipolar transistors; process parameters; quasisaturation; transistor operation limits; vertical PNP transistor; Analytical models; Area measurement; Breakdown voltage; Current density; Equations; Low voltage; Probes; Semiconductor device modeling; Solid modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN
1088-9299
Print_ISBN
0-7803-7561-0
Type
conf
DOI
10.1109/BIPOL.2002.1042885
Filename
1042885
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