DocumentCode :
2385169
Title :
Process variability analysis of a Si/SiGe HBT technology with greater than 200 GHz performance
Author :
Ahlgren, D.C. ; Jagannathan, B. ; Jeng, S.J. ; Smith, P. ; Angell, D. ; Chen, H. ; Khater, M. ; Pagette, F. ; Rieh, J.-S. ; Schonenberg, K. ; Stricker, A. ; Freeman, G. ; Joseph, A. ; Stein, K. ; Subbanna, S.
Author_Institution :
IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA
fYear :
2002
fDate :
2002
Firstpage :
80
Lastpage :
83
Abstract :
A process tolerance analysis of a SiGe NPN HBT with >200 GHz fT and >250 GHz fMAX is presented. AC and DC device results on 200 mm wafers demonstrate a wide process window resulting in a highly manufacturable HBT technology.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device measurement; 200 mm; 250 GHz; AC device results; DC device results; Si/SiGe HBT technology; SiGe; SiGe NPN HBT; process tolerance analysis; process variability analysis; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Microelectronics; Performance analysis; Production; Silicon germanium; Space technology; Tolerance analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002
ISSN :
1088-9299
Print_ISBN :
0-7803-7561-0
Type :
conf
DOI :
10.1109/BIPOL.2002.1042891
Filename :
1042891
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2385169
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